Designs of Broadband Unilateral Finline SIS Mixers Employing 15 mum Silicon-On-Insulator Substrate at THz Frequencies
Designs of Broadband Unilateral Finline SIS Mixers Employing 15 mum Silicon-On-Insulator Substrate at THz Frequencies
复制标题
采用 15 mum 绝缘体硅衬底的宽带单边 Finline SIS 混频器在太赫兹频率下的设计
DOI:
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发表时间:
2010
期刊:
影响因子:
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通讯作者:
K. Jacobs
中科院分区:
文献类型:
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作者:
B. K. Tan;G. Yassin;P. Grimes;K. Jacobs
We present the design of two niobium singleended Superconductor-Insulator-Superconductor (SIS) mi xers optimized to work in the frequency range of 600–700 GHz. A key feature of this new mixer design is the utilization of a unilateral finline taper. This transition is significantly easier to design and simulate than the previously employed antipod al finline, and more importantly it simplifies the chip fabricat ion considerably since the fins do not overlap at any stage. RF power propagating in the finline is coupled to the microstrip either directly from the slotline to microstrip, or more effi ciently via a coplanar waveguide (CPW). Another novel feature of our design is the fabrication of the mixer chip on a very thin silicon substrate which will be achieved using Silicon-On-Insulat or (SOI) technology. This will allow easy matching of the incoming si gnal from the feed horn to the loaded waveguide and allows the lightweight mixer chip to be held in the E-plane of the waveguide using gold beam leads, eliminating the need for a deep groove in the waveguide wall. These new features yield a significant ly shorter chip and allow wider RF bandwidth since the excitati on of higher order modes in the groove has been avoided. The mixer block is extremely simple, composing a smooth-walled horn and a waveguide section without any complicated mechanical features. In this paper, we present the details of the mixer chip, including various transition sections, tuning circuits and mixer block designs, supported by electromagnetic simulat ions. We describe the design procedure in detail and predict the fu ll mixer performance using the SuperMix software package.
DOI:
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发表时间:
2008
期刊:
Proceedings of the 19th International Symposium on Space Terahertz Technology, ISSTT 2008
影响因子:
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作者:
Kittara P.
通讯作者:
Kittara P.
影响因子:
1.1
作者:
Yassin G
通讯作者:
Yassin G