GaAs0.75P0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD
GaAs0.75P0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD
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MBE 和 MOCVD 生长的 GaAs0.75P0.25/Si 双结太阳能电池
DOI：
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发表时间：
2016
影响因子：
3
通讯作者：
S. Ringel
中科院分区：
文献类型：
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作者：
T. Grassman;D. Chmielewski;S. Carnevale;J. Carlin;S. Ringel
首次报道了采用分子束外延（MBE）和金属有机化学气相沉积（MOCVD）生长的GaAs_（0.75）P_（0.25）/Si双结太阳电池。两种情况下制造的测试设备显示工作串联行为，具有清晰的电压添加和频谱划分。然而，由于在MBE生长需要防止隧道结故障的热预算的限制，MBE生长的GaAs 0.75P 0.25顶电池被发现是较低的质量比等效的MOCVD生长的设备。此外，尽管减少了热预算，MBE生长的隧道结表现出退化的行为，进一步降低了MBE/MOCVD组合电池的整体性能。全MOCVD生长的结构没有显示出这样的问题，并产生了显着更高的整体性能。这些最初的原型电池显示出有前途的性能，并为进一步的器件改进指明了几条重要的途径。
Monolithic, epitaxial, series-connected GaAs0.75P0.25/Si dual-junction solar cells, grown via both molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), are reported for the first time. Fabricated test devices for both cases show working tandem behavior, with clear voltage addition and spectral partitioning. However, due to thermal budget limitations in the MBE growth needed to prevent tunnel junction failure, the MBE-grown GaAs0.75P0.25 top cell was found to be lower quality than the equivalent MOCVD-grown device. Additionally, despite the reduced thermal budget, the MBE-grown tunnel junction exhibited degraded behavior, further reducing the overall performance of the MBE/MOCVD combination cell. The all-MOCVD-grown structure displayed no such issues and yielded significantly higher overall performance. These initial prototype cells show promising performance and indicate several important pathways for further device refinement.