Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells
Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells
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DOI：
10.1109/16.46378
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发表时间：
1990-02
影响因子：
3.1
通讯作者：
W. Devaney;W. Chen;J. M. Stewart;R. Mickelsen
中科院分区：
文献类型：
--
作者：
W. Devaney;W. Chen;J. M. Stewart;R. Mickelsen
讨论了ZnO/CdZnS/CuInGaSe/sub 2/结构的薄膜多晶太阳能电池，其总面积效率在AM1.5等效光照下可达12.5%，在AM 0等效光照下可达10.5%。这些是报道的多晶薄膜太阳能电池的最高总面积效率之一。给出了这种高效率电池的电流-电压和量子效率数据。介绍了CuInGaSe/sub 2/的真空物理气相沉积，CdZnS的化学沉积从溶液中，和ZnO的反应溅射沉积。各个层的电学和光学性质已经从完整器件和单独见证层的测量中推断出来。从这些测量获得的器件层的光学常数和厚度，并优化器件效率的要求进行了讨论。>
Thin-film polycrystalline solar cells with the structure ZnO/CdZnS/CuInGaSe/sub 2/ fabricated with total area efficiencies of up to 12.5% under AM1.5 equivalent illumination and 10.5% under AM0 equivalent are discussed. These are among the highest total area efficiencies reported for polycrystalline thin-film solar cells. Current-voltage and quantum efficiency data for such a high-efficiency cell are given. Described are the deposition of the CuInGaSe/sub 2/ by physical vapor deposition in vacuum, the CdZnS by chemical deposition from solution, and the ZnO by reactive sputtering. The electrical and optical properties of the individual layers have been inferred from measurements on complete devices and on separate witness layers. Optical constants and thicknesses obtained for the device layers from these measurements are presented, and the requirements for optimizing the device efficiency are discussed. >