Surface-electronic structure of alpha -like Ce compounds.
Surface-electronic structure of alpha -like Ce compounds.
复制标题
α 类 Ce 化合物的表面电子结构。
作者：
Laubschat;Weschke;Holtz;Domke;Strebel;Kaindl
光电子发射研究与不同程度的表面灵敏度的Ce 3{ital d}核心水平和Ce 4{ital f}价带区域的{alpha}-样Ce化合物CeIr{sub 2}，CePd{sub 3}，和CeRh{sub 3}。在所有研究的情况下，强烈的变化，4{ital f}电子结构的表面朝向更本地化的{gamma}-样的行为进行观察，需要重新分析以前报道的光电子能谱的{alpha}-样的Ce化合物。指出了Ce系统的表面催化性能以及窄带材料的表面电子结构的改进理解的意义。
Photoemission studies with varying degrees of surface sensitivity are reported for the Ce 3{ital d} core-level and Ce 4{ital f} valence-band regions of the {alpha}-like Ce compounds CeIr{sub 2}, CePd{sub 3}, and CeRh{sub 3}. In all cases studied, strong changes of the 4{ital f} electronic structure at the surface towards a more localized {gamma}-like behavior are observed, requiring a reanalysis of previously reported photoemission spectra of {alpha}-like Ce compounds. Implications for an improved understanding of the surface-catalytic properties of Ce systems, as well as of the surface-electronic structure of narrow-band materials, are pointed out.