New 4-transistor XOR and XNOR designs
New 4-transistor XOR and XNOR designs
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DOI：
10.1109/apasic.2000.896899
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发表时间：
2000-08
期刊：
影响因子：
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通讯作者：
H. Bui;Abdulkarim Al-Sheraidah;Yuke Wang
中科院分区：
文献类型：
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作者：
H. Bui;Abdulkarim Al-Sheraidah;Yuke Wang
异或门和异或非门在数字电路中很重要。本文提出了一套新的低功耗 4 晶体管 XOR/XNOR 门。已对电路以及其他 10 个异或门进行了仿真。结果表明，新的 XOR/XNOR 门始终比发布时已知的任何其他 XOR/XNOR 门消耗更少的功耗。事实上，它的功耗比互补 CMOS 实现低 3 倍以上，并且传播延迟可缩短 34%。静态能量回收异或门是第二低功耗的门，其功耗比新门多 10%。
Exclusive-OR and exclusive-NOR gates are important in digital circuits. This paper proposes a new set of low power 4-transistor XOR/XNOR gates. Simulations have been performed on the circuits along with 10 other XOR gates. The results show that the new XOR/XNOR gates consistently consume less power than any other XOR/XNOR gate known at the time of publication. In fact, it consumes up to more than 3 times less power than the complementary CMOS implementation and can have 34% better propagation delay. The static energy-recovery XOR gate, which is the second least power-consuming, dissipates 10% more power than the new gates.