Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing
Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing
复制标题
通过后生长图案化和退火降低 MOVPE 生长的 (211)CdTe/Si 中的位错密度
DOI：
10.1007/s11664-023-10318-9
复制
发表时间：
2023
影响因子：
2.1
通讯作者：
T. Maruyama
中科院分区：
文献类型：
--
作者：
B. S. Chaudhari;M. Niraula;Y. Takagi;R. Okumura;K. P. Sharma;T. Maruyama
研究了金属有机物气相外延（MOVPE）生长的（211）CdTe/Si外延层中生长后图形化和退火对减少穿透位错（TD）的有效性。使用光刻法在生长的CdTe样品上形成60微米宽的正方形图案，然后在流动的氢气环境中进行非原位退火。退火温度从550°C变化至800°C，然后在该温度下保持5分钟的固定持续时间。TD密度使用蚀刻坑密度（EPD）技术确定。EPD值的比较显示，图案化样品具有比在类似条件下退火的未图案化样品更低的EPD值。这表明退火促进位错滑移到岛的侧壁，因此与未图案化的样品相比，对于图案化的样品在位错去除方面更有效。
We studied the effectiveness of post-growth patterning and annealing on threading dislocation (TD) reduction in (211) CdTe/Si epilayers grown using metalorganic vapor-phase epitaxy (MOVPE). Sixty-micrometer-wide square patterns were formed on the as-grown CdTe samples using photolithography and then subjected to ex situ annealing in a flowing hydrogen environment. The annealing temperature was varied from 550°C to 800°C, then held at this temperature for a fixed duration of 5 min. The TD densities were determined using the etch pit density (EPD) technique. A comparison of EPD values revealed that the patterned samples had lower EPD values than the unpatterned samples annealed under similar conditions. This suggests that annealing promotes dislocation glide to the sidewalls of the islands and is thus more effective at dislocation removal for the patterned samples in comparison to the unpatterned samples.