An experimental investigation on the effective electron mass in InGaO3(ZnO)3 by valence electron energy-loss spectroscopy
An experimental investigation on the effective electron mass in InGaO3(ZnO)3 by valence electron energy-loss spectroscopy
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DOI：
10.1016/j.matdes.2016.01.121
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发表时间：
2016-04
影响因子：
8.4
通讯作者：
Lili Wu;Hong Gao;Xitian Zhang
中科院分区：
文献类型：
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作者：
Lili Wu;Hong Gao;Xitian Zhang
In_2ZnO_xGa_xO_3(−)_m具有极高的场效应迁移率，被认为是潜在的透明场效应晶体管的沟道材料。为了深入了解In2−xGaxO3(氧化锌)m的高迁移率特性，用价电子能量损失谱研究了与载流子迁移率和态密度密切相关的有效电子质量.测得电子束沿c轴入射的InGaO3(ZnO)3纳米带的有效电子质量为0.130 m0，入射电子束沿c轴的有效电子质量为0.132 m0。通过与计算值和其他人测量的值进行比较，对这些结果进行了严格的检查。它不仅很好地验证了理论研究的结果，而且对InGaO(ZnO)m中有效电子质量的各向同性也有了新的认识。
In 2− x Ga x O 3 (ZnO) m are reported to exhibit an extremely high field-effect mobility, and therefore considered as the potential channel materials for transparent field-effect transistor. To gain a deep insight into the high mobility of In 2− x Ga x O 3 (ZnO) m, the effective electron mass, which is inherently related to the mobility of charge carriers as well as the density of states, is investigated by valence electron energy-loss spectroscopy. The effective electron masses in InGaO 3 (ZnO) 3 nanobelts with the incident electron beam along the c axis and< 11 2-0> are determined as 0.130 m 0 and 0.132 m 0, respectively. These results critically checked by a comparison with calculated values and values measured by others. It not only well validates the results acquired from theoretical investigations, but also shed a new light on the isotropy of the effective electron mass in InGaO 3 (ZnO) m.