X-ray diffraction measurements for liquid As2Se3 up to the semiconductor-metal transition region
X-ray diffraction measurements for liquid As2Se3 up to the semiconductor-metal transition region
复制标题
液态 As2Se3 直至半导体-金属过渡区域的 X 射线衍射测量
DOI：
10.1016/0022-3093(92)90090-7
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发表时间：
1992
影响因子：
3.5
通讯作者：
K. Tamura
中科院分区：
文献类型：
--
作者：
S. Hosokawa;Y. Sakaguchi;K. Tamura
在高达1500°C和70 bar的温度和压力下对液体（1-）As 2Se 3进行X射线衍射测量。根据作者自己的设计，研制了一个高压容器和一个蓝宝石样品池，用于能量色散法测量。结构因子随着温度的升高而变宽，并在1000°C左右发生显著变化，并伴随着超导体-金属（SC-M）转变;第一个尖锐的衍射峰在1.2 π − 1附近消失，第二个和第三个最大值合并。当SC-M转换发生时，最近邻距离和平均协调数开始增加。还通过X射线吸收法测量了1-As 2Se 3在高达1600°C和700 bar的温度和压力范围内的密度。在SC-M过渡区发生体积收缩。
X-ray diffraction measurements were performed for liquid (1-) As2Se3at temperatures and pressures up to 1500°C and 70 bar. A high-pressure vessel and a sapphire sample cell were developed, according to the authors' own design, for measurements using the energy-dispersive method. The structure factor becomes broadened with increasing temperature and changes significantly at about 1000°C accompanied by the semiconductor-to-metal (SC-M) transition; the first sharp diffraction peak around 1.2Å−1disappears and the second and third maxima merge. The nearest-neighbor distance and the average coordination number start to increase when the SC-M transition occurs. The density of 1-As2Se3in the temperature and pressure range up to 1600°C and 700 bar, respectively, were also measured by the X-ray absorption method. A volume contraction occurs in the SC-M transition region.