120 nm 1.2 V low-noise VCO with over seven octave tuning range
120 nm 1.2 V low-noise VCO with over seven octave tuning range
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120 nm 1.2 V 低噪声 VCO，具有超过七个倍频程的调谐范围
DOI：
10.1049/el.2010.3726
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发表时间：
2011
影响因子：
1.1
通讯作者：
Ke L
中科院分区：
文献类型：
--
作者：
Ke L
基于反相器的压控振荡器是模拟集成电路设计中的基本构建块，并且比电感电容器具有更紧凑的尺寸和更宽的调谐范围。在某些应用中，需要超宽的调谐范围，而这在与良好相位噪声的要求相结合时可能难以实现。提出的是一个双反馈双反相器延迟单元，表现出显着更广泛的调谐范围比以前报道的设计，同时保持良好的相位噪声性能。这项工作的一个关键贡献是制造了一个120 nm 1.2 V的原型芯片，测量结果证实了超过七个倍频程的调谐范围。
Inverter based voltage controlled oscillators are a fundamental building block in analogue integrated circuit design and enjoy a more compact size and wider tuning range than their inductor capacitor counterparts. In some applications an ultra-wide tuning range is desired and this can be difficult to achieve when combined with the requirement for good phase noise. Presented is a double feedback dual inverter delay cell that demonstrates significantly wider tuning range than previously reported designs whilst maintaining excellent phase noise performance. A key contribution to the work is the fabrication of a 120 nm 1.2 V prototype chip with measured results confirming a tuning range of over seven octaves.
相位角肌肉质量评价及青少年体质实测
DOI：
--
发表时间：
2021
期刊：
影响因子：
--
作者：
Nakajima Hisakazu;Kodo Kazuki;小山憲一郎 穴繁結奈;日下部徹
通讯作者：
日下部徹