Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels
Novel Gate-All-Around Poly-Si TFTs With Multiple Nanowire Channels
复制标题
具有多个纳米线通道的新型全栅极多晶硅 TFT
DOI：
10.1109/led.2008.2001176
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发表时间：
2008
影响因子：
4.9
通讯作者：
Huang
中科院分区：
文献类型：
--
作者：
Ta;Shih;M.H. Yu;Wei;Cheng;Kuo;Y. Tai;Huang
具有多个纳米线沟道（MNC）的新型全包围栅（GAA）多晶硅薄膜晶体管（TFTs）首次使用简单的工艺制造，以展示高性能的电特性和对短沟道效应（SCE）的高免疫力。具有高的体厚宽比（TFin/WFin）的纳米线沟道仅通过侧壁间隔物形成来实现，该体厚宽比（TFin/WFin）近似等于1。此外，还获得了独特的悬浮跨国公司，以构建GAA结构。所制备的GAA-MNC薄膜晶体管具有良好的三维栅控性和电学特性，具有高的开/关电流比（> 108）、低的阈值电压、陡峭的亚阈值摆幅、近自由的漏致势垒降低以及优异的SCE抑制性能。因此，这种高性能GAA-MNC TFT非常适合于系统面板和3D电路中的应用。
The novel gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance electrical characteristics and high immunity to short-channel effects (SCEs). The nanowire channel with high body-thickness-to-width ratio (TFin/WFin), which is approximately equal to one, was realized only with a sidewall-spacer formation. Moreover, the unique suspending MNCs were also achieved to build the GAA structure. The resultant GAA-MNC TFTs showed outstanding three-dimensional (3-D) gate controllability and excellent electrical characteristics, which revealed a high on/off current ratio ( > 108), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering, as well as an excellent SCE suppression. Therefore, such high-performance GAA-MNC TFTs are very suitable for applications in system-on-panel and 3-D circuits.