Energy Transfer in Multi-Stacked InAs Quantum Dots
Energy Transfer in Multi-Stacked InAs Quantum Dots
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DOI：
10.1143/jjap.50.04dh05
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发表时间：
2011-04-01
影响因子：
1.5
通讯作者：
Ohtsu, Motoichi
中科院分区：
文献类型：
--
作者：
Akahane, Kouichi;Yamamoto, Naokatsu;Ohtsu, Motoichi
我们制造了调制堆叠量子点 (QD) 结构，以使用应变补偿技术研究 QD 之间的能量转移，该技术使我们能够制造垂直排列的高度堆叠结构，而不会降低晶体质量。在样品中清楚地观察到大 QD 基态的增强光致发光 (PL) 强度，其中小 QD 的基态与大 QD 的第一激发态共振，表明能量从小 QD 转移到大 QD。长程能量转移达到约 200 nm，可以通过测量 PL 强度的 N 依赖性来考虑。 (C) 2011 日本应用物理学会
We fabricated a modulated stacked quantum dot (QD) structure to investigate energy transfer among QDs using a strain compensation technique that allowed us to fabricate a vertically aligned, highly stacked structure without any degradation in crystal quality. Enhanced photoluminescence (PL) intensity for the ground state of large QDs was clearly observed in a sample where the ground state of small QDs was resonant to the first excited state of large QDs, indicating energy transfer from small QDs to large QDs. Long-range energy transfer reached approximately 200 nm and can be considered from the measurement of N dependence of PL intensity. (C) 2011 The Japan Society of Applied Physics