Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si ( 100 )
Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si ( 100 )
复制标题
Si 上异质集成六方相和立方相 GaN 发光中心的阴极发光研究 ( 100 )
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
C. Bayrama
中科院分区：
文献类型：
--
作者：
R. Liu;C. Bayrama
通过金属有机化学气相沉积，通过选择性外延和六边形到立方体的相变，分别在轴Si（100）衬底上集成了gan，并通过温度和注入强度依赖的阴极发光研究了它们各自发光中心的起源。在Si上集成的六方（立方）GaN中，我们在室温下发现了3.43 eV （3.22 eV）的近带边缘发光和2.21 eV （2.72 eV）的缺陷峰。在低温下，我们报道了3.49 eV （3.28 eV）的六方（立方）GaN束缚激子跃迁，以及3.31 eV （3.18 eV和2.95 eV）的供体到受体跃迁。在立方氮化镓中，两个缺陷相关的受体能量被确定为110和360 meV。对于六边形（立方）GaN（使用600 K的Debye温度（bÞ）），提取的Varshni系数为a1 / 47:37 760:13 10 4 or:8360:22 10 ÞeV=K和E01⁄43:5160:01ð3:3160:01ÞeV。集成在CMOS兼容的轴上Si（100）上的六边形和立方GaN被证明是下一代器件的有前途的材料。AIP出版社出版。[http://dx.doi.org/10.1063/1.4958335]
Hexagonal and cubic GaN—integrated on on-axis Si(100) substrate by metalorganic chemical vapor deposition via selective epitaxy and hexagonal-to-cubic-phase transition, respectively—are studied by temperatureand injection-intensity-dependent cathodoluminescence to explore the origins of their respective luminescence centers. In hexagonal (cubic) GaN integrated on Si, we identify at room temperature the near band edge luminescence at 3.43 eV (3.22 eV), and a defect peak at 2.21 eV (2.72 eV). At low temperature, we report additional hexagonal (cubic) GaN bound exciton transition at 3.49 eV (3.28 eV), and a donor-to-acceptor transition at 3.31 eV (3.18 eV and 2.95 eV). In cubic GaN, two defect-related acceptor energies are identified as 110 and 360 meV. For hexagonal (cubic) GaN (using Debye Temperature (bÞ of 600 K), Varshni coefficients of a1⁄47:3760:13 10 4 ð6:8360:22 10 ÞeV=K and E01⁄43:5160:01ð3:3160:01ÞeV are extracted. Hexagonal and cubic GaN integrated on CMOS compatible on-axis Si(100) are shown to be promising materials for next generation devices. Published by AIP Publishing. [http://dx.doi.org/10.1063/1.4958335]