Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostructure considering dislocation scattering
Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostructure considering dislocation scattering
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DOI：
10.1002/pssc.200674768
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
Y. Tomita;Hirofumi Ikegami;H. Fujishiro
中科院分区：
文献类型：
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作者：
Y. Tomita;Hirofumi Ikegami;H. Fujishiro
采用蒙特卡罗（MC）模拟技术研究了螺纹位错对AlGaN/GaN异质结构中高场电子输运特性的影响。采用位错散射的三维弛豫时间，其中螺纹位错被建模为电荷线。我们的研究表明，与体态n-GaN相比，在AlGaN/GaN异质结构中，线位错对电子速度的影响较小，这是由于二维电子气体（2DEG）中高浓度载流子的强烈屏蔽作用。因此，AlGaN/GaN-HEMT对穿入通道的螺纹位错不敏感。（©2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
The effect of the threading dislocation on the high-field electron transport characteristics in the AlGaN/GaN heterostructure is studied using the Monte Carlo (MC) simulation technique. The three-dimensional (3D) relaxation time of the dislocation scattering, where the threading dislocation is modeled as a line of charge, is applied to the simulation. Our study shows that the threading dislocation has a small effect on the electron velocity in the AlGaN/GaN heterostructure as compared with that in the bulk n-GaN, which is owing to the strong screening effect by the highly concentrated carriers in the two-dimensional electron gas (2DEG). Consequently, the AlGaN/GaN-HEMT is insensitive to the existence of the threading dislocation piercing through the channel. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)