Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate
Si-capping-induced surface roughening on the strip structures of Ge selectively grown on an Si substrate
复制标题
Si 覆盖导致 Si 衬底上选择性生长的 Ge 带状结构表面粗糙化
DOI：
10.1116/6.0001142
复制
发表时间：
2021
影响因子：
1.4
通讯作者：
Ishikawa Yasuhiko
中科院分区：
文献类型：
--
作者：
Katamawari Riku;Kawashita Kazuki;Hizawa Takeshi;Ishikawa Yasuhiko
