Low-Power Microwave Plasma Conductivity
Low-Power Microwave Plasma Conductivity
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低功率微波等离子体电导率
DOI：
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发表时间：
2009
影响因子：
1.5
通讯作者：
R. Gesche
中科院分区：
文献类型：
--
作者：
H. Porteanu;S. Kuhn;R. Gesche
等离子体电导率是基础研究和特定应用的普遍兴趣。为此，在1到103毫巴的压力下，在2.2 GHz频率下测量等离子体等效阻抗和复合电导率，作为槽型谐振器中微波功率的函数，主要与等离子体电容耦合。等离子体阻抗是自调节的，保持一个准恒定的微波振幅。阻抗（或电导率）虚部的符号取决于压力，因此也取决于电子密度。当德拜长度与谐振腔的尺寸相当且等离子体频率接近微波驱动频率时，反应部分变得显著。
Plasma conductivity is of general interest for both fundamental research and specific applications. For this purpose, plasma equivalent impedance and complex conductivity are measured at 2.2 GHz, at pressures between 1 and 103 mbar, as a function of microwave power in a slot-type resonator, predominantly capacitively coupled to plasma. The plasma impedance is self-adjusting, maintaining a quasi-constant microwave amplitude. The sign of the imaginary part of the impedance (or conductivity) depends on pressure and, consequently, on electron density. The reactive part becomes significant if the Debye length is comparable with the size of the resonator and the plasma frequency is close to the microwave driving frequency.