High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric
High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric
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DOI：
10.1109/led.2011.2172911
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发表时间：
2012-01-01
影响因子：
4.9
通讯作者：
Chin, Albert
中科院分区：
文献类型：
--
作者：
Tsai, C. Y.;Wu, T. L.;Chin, Albert
采用高k LaAlO 3/SiO2栅介质，凹栅GaN MOSFET具有0.1 V的低阈值电压（V-t）和13.5 Ω的低导通电阻（R-on）。mm，385 V的高击穿电压，136 mS/mm的高击穿电压（g（m）），以及172 mu A/V-2的创纪录最佳归一化驱动电流（mu C-ox）。这种优异的器件完整性是由于3.0 nm的小电容等效厚度，使用高k栅极电介质和凹栅蚀刻。
Using a high-k LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (V-t) of 0.1 V, low on-resistance (R-on) of 13.5 Omega . mm, high breakdown voltage of 385 V, high transconductance (g(m)) of 136 mS/mm, and record-best normalized drive current (mu C-ox) of 172 mu A/V-2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-k gate dielectric and recessed-gate etching.