Design of GaAs-based valley phononic crystals with multiple complete phononic bandgaps at ultra-high frequency
Design of GaAs-based valley phononic crystals with multiple complete phononic bandgaps at ultra-high frequency
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DOI：
10.7567/1882-0786/ab0772
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发表时间：
2019-04-01
影响因子：
2.3
通讯作者：
Iwamoto, Satoshi
中科院分区：
文献类型：
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作者：
Kim, Ingi;Arakawa, Yasuhiko;Iwamoto, Satoshi
我们报道了基于gaas的单片谷声子晶体（VPnCs）的设计，该晶体具有多个完整的声子带隙，支持同时在千兆赫范围内具有不同对称性的谷保护边缘状态。单元胞中三角形孔的旋转打破了镜像对称，这种取向自由度使结构表现出不同的谷涡手性。我们用数值方法证明了在不同VPnCs之间的接口尖角处具有抑制后向散射的多波段谷保护边缘状态的传输。这种单片半导体结构通过光刻技术为超高频拓扑纳米声子应用铺平了道路。(C) 2019日本应用物理学会
We report the design of GaAs-based monolithic valley phononic crystals (VPnCs) with multiple complete phononic bandgaps, which support simultaneous valley-protected edge states with different symmetries in the gigahertz range. Rotation of triangular holes in the unit cells breaks the mirror symmetry, and this orientation degree of freedom enables the structures to exhibit different valley vortex chiralities. We numerically demonstrate the transport of multi-band valley-protected edge states with suppressed backscattering at the sharp corners of the interfaces between different VPnCs. Such monolithic semiconductor structures pave the way for ultra-high frequency topological nanophononic applications by using the lithographic technique. (C) 2019 The Japan Society of Applied Physics