Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values
Direct extraction of GaAs MESFET intrinsic element and parasitic inductance values
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直接提取GaAs MESFET本征元件和寄生电感值
DOI：
10.1109/mwsym.1990.99594
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
B. Beckwith
中科院分区：
文献类型：
--
作者：
E. Arnold;M. Golio;M. Miller;B. Beckwith
本文介绍了一种简单的方法，用于提取GaAs MESFET等效电路的本征元件和寄生电感值。本征元件值从低频y参数数据中提取，通过先前确定的寄生电阻进行去嵌入。然后，通过将所得建模z参数与外部测量z参数进行比较来评估寄生电感值。所有元素都是从同一组热FET S参数测量中提取的。该方法是非常快的，并且由此产生的等效电路提供了一个很好的匹配，通过18 GHz的测量S参数。<<ETX>>
A simple method is described for extracting the intrinsic element and parasitic inductance values for the GaAs MESFET equivalent circuit. The intrinsic element values are extracted from low-frequency y-parameter data deembedded through previously determined parasitic resistances. Parasitic inductance values are then evaluated by comparing the resulting modeled z-parameters with the extrinsic measured z-parameters. All elements are extracted from the same set of hot FET S-parameter measurements. The method is very fast, and the resulting equivalent circuit provides an excellent match to measured S-parameters through 18 GHz.<<ETX>>