Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
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DOI：
10.1109/ted.2013.2268160
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发表时间：
2013-10-01
影响因子：
3.1
通讯作者：
Micovic, Miroslav
中科院分区：
文献类型：
--
作者：
Shinohara, Keisuke;Regan, Dean C.;Micovic, Miroslav
在本文中，我们报告了最先进的GaN基高电子迁移率晶体管（HEMT）和肖特基二极管的高频性能，通过创新的器件缩放技术，如垂直缩放增强和耗尽模式（E/D模式）AlN/GaN/AlGaN双异质结HEMT外延结构，通过MBE再生长的低电阻n（+）-GaN/2DEG欧姆接触，可制造的20纳米对称和非对称自对准栅极工艺，以及横向金属/2DEG肖特基接触。由于本征延迟和寄生延迟的比例缩放，在深度缩放的GaN HEMT中获得了超过450 GHz（同时f（max）为440 GHz）和接近600 GHz（同时f（T）为310 GHz）的f（max），同时保持了上级约翰逊品质因数。由于其极低的导通电阻和低漏极电压下的高增益，该器件在低功耗下表现出出色的噪声性能。501-20级直接耦合场效应晶体管逻辑环形振荡器电路的成功制造，具有高成品率和高均匀性，证明了具有>1000个晶体管的GaN基E/D模式集成电路的可行性。此外，具有横向金属/2DEG肖特基接触和2DEG/n（+）-GaN欧姆接触的自对准GaN肖特基二极管表现出高达2.0 THz的RC限制截止频率。
In this paper, we report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures, a low-resistance n(+)-GaN/2DEG ohmic contact regrown by MBE, a manufacturable 20-nm symmetric and asymmetric self-aligned-gate process, and a lateral metal/2DEG Schottky contact. As a result of proportional scaling of intrinsic and parasitic delays, an ultrahigh f(T) exceeding 450 GHz (with a simultaneous f(max) of 440 GHz) and a f(max) close to 600 GHz (with a simultaneous f(T) of 310 GHz) are obtained in deeply scaled GaN HEMTs while maintaining superior Johnson figure of merit. Because of their extremely low on-resistance and high gain at low drain voltages, the devices exhibited excellent noise performance at low power. 501-stage direct-coupled field-effect transistor logic ring oscillator circuits are successfully fabricated with high yield and high uniformity, demonstrating the feasibility of GaN-based E/D-mode integrated circuits with >1000 transistors. Furthermore, self-aligned GaN Schottky diodes with a lateral metal/2DEG Schottky contact and a 2DEG/n(+)-GaN ohmic contact exhibited RC-limited cutoff frequencies of up to 2.0 THz.