Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz
Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz
复制标题
22nm FDSOI 平台上的低温 RF CMOS 记录 fT=495GHz 和 fMAX=497GHz
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
S. Datta
中科院分区：
文献类型：
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作者：
W. Chakraborty;K. A. Aabrar;J. Gomez;R. Saligram;A. Raychowdhury;P. Fay;S. Datta
77K下的低温DRAM是一种很有前途的高带宽存储选项，可用于补充4K下的低温超导(SC)处理器[1]。为了弥补SC逻辑(~25 mV)和低温DRAM(~0.8-1V)之间三个数量级的电压差距，需要具有超高增益带宽积(~THz)的CMOS型混合信号接口电路。在这项工作中，我们展示了18 nm栅长(LG)FDSOI NMOS和PMOS的高频工作从300K到5.5K的工作温度(T)。结果表明，在5.5K下，NMOS/PMOS的电流增益截止频率(FT)为495/337 GHz(超过300K的增益为35%/25%)，最大振荡频率(Fmax)为497/372 GHz(增益为30%/30%)。22 nm FDSOI平台上的CRYO-RF CMOS支持太赫兹模拟体制，同时提供千兆级的数字密度。
Cryogenic DRAM at 77K is a promising high bandwidth memory option to complement cryogenic superconducting (SC) processors at 4K [1]. CMOS mixed-signal interface circuits with ultra-high gain-bandwidth product (~THz) is needed to bridge the three-order-of-magnitude voltage gap between SC logic (~25mV) and cryo-DRAM (~0.8-1V). In this work, we demonstrate high-frequency operation of 18nm gate length (LG) FDSOI NMOS and PMOS from 300K to 5.5K operating temperature (T). We show record unity current-gain cutoff frequency (fT) of 495/337 GHz (35%/25% gain over 300K) and maximum oscillation frequency (fMAX) of 497/372 GHz (30%/30% gain) for NMOS/PMOS at 5.5 K. A small-signal equivalent circuit model is developed to identify the T-dependent and T-invariant components of the extrinsic and intrinsic FET. Cryo-RF CMOS on 22 nm FDSOI platform enables access to Terahertz analog regime, while providing Giga-scale digital density at the same time.