Wafer level surface activated bonding tool for MEMS packaging
Wafer level surface activated bonding tool for MEMS packaging
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DOI：
10.1149/1.1758723
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发表时间：
2004-01-01
影响因子：
3.9
通讯作者：
Suga, T
中科院分区：
文献类型：
--
作者：
Howlader, MMR;Okada, H;Suga, T
晶圆级表面激活键合 (SAB) 工具已开发用于低温微机电系统 (MEMS) 封装。该工具可容纳直径 8 英寸的晶圆。该工具的主要特点是自动平行调整 8 英寸晶圆，误差范围在 +/-1 微米以内，X、Y 和 θ 轴对准精度为 +/-0.5 微米。我们已经采用了一种新的集成技术，使用该工具将离子晶体与透明和不透明的薄中间层集成。各种尺寸的图案硅和裸硅、硅酸盐玻璃以及在真空中经低能氩离子源清洁的石英晶片已通过该技术在低温下成功粘合。密封硅腔的放射性同位素精细泄漏和真空座测试显示泄漏率分别为1.0 x 10(-9)和2.6 x 10(-16) Pa/m(3) s，低于美国军用标准对恶劣环境下MEMS器件的封装要求。发现了无空隙界面，其粘合强度可与散装材料相媲美。没有粘合层的 SAB 处理的离子晶体之间的低粘合力被认为是由于辐射引起的不连续偏振。 (C) 2004 年电化学协会。
A wafer level surface activated bonding (SAB) tool has been developed for microelectromechanical systems (MEMS) packaging at low temperature. The tool accommodates 8 in. diam wafers. The principle features of the tool are the automatic parallel adjustment for 8 in. wafers to a margin of error within +/-1 mum and the X, Y, and theta axis alignments with an accuracy of +/-0.5 mum. We have approached a new integration technique for the integration of ionic crystals with transparent and nontransparent thin intermediate layers using this tool. Various sizes of patterned and bare silicon, At silicate glass, and quartz wafers cleaned by a low energy argon ion source in a vacuum have been successfully bonded by this technique at low temperature. Radioisotope fine leak and vacuum seat tests of sealed silicon cavities show leak rates of 1.0 x 10(-9) and 2.6 x 10(-16) Pa/m(3) s, respectively, which are lower than the American military standard encapsulation requirements for MEMS devices in harsh environments. Void-free inter-faces with bonding strengths comparable to bulk materials are found. Low adhesion between SAB-processed ionic crystals without adhesive layers is believed to be due to radiation-induced discontinuous polarization. (C) 2004 The Electrochemical Society.