Selective domain wall depinning by localized Oersted fields and Joule heating
Selective domain wall depinning by localized Oersted fields and Joule heating
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DOI：
10.1063/1.2990629
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发表时间：
2008-09-29
影响因子：
4
通讯作者：
Heyderman, Laura J.
中科院分区：
文献类型：
--
作者：
Ilgaz, Dennis;Klaeui, Mathias;Heyderman, Laura J.
利用低温磁阻测量，研究了通过施加电流脉冲穿过与坡莫合金元素相邻的Au纳米线来选择性地局部移动磁畴壁的可能性。我们发现，由于焦耳加热和电流的Oersted场，随着电流密度的增加，磁区壁脱钉场发生了显著的变化，并且由于Oersted场的存在，实现了不加任何外场的受控运动。通过在离Au丝不同的距离放置磁区壁，我们确定了焦耳加热和Oersted场的范围，并且两者的影响可以分开。(C)2008年美国物理研究所。
Using low temperature magnetoresistance measurements, the possibility to selectively move a domain wall locally by applying current pulses through a Au nanowire adjacent to a permalloy element is studied. We find that the domain wall depinning field is drastically modified with increasing current density due to the Joule heating and the Oersted field of the current, and controlled motion due to the Oersted field without any externally applied fields is achieved. By placing the domain wall at various distances from the Au wire, we determine the range of the Joule heating and the Oersted field and both effects can be separated. (C) 2008 American Institute of Physics.