RAPS: Restore-Aware Policy Selection for STT-MRAM-Based Main Memory under Read Disturbance
RAPS: Restore-Aware Policy Selection for STT-MRAM-Based Main Memory under Read Disturbance
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DOI：
10.1109/iccd.2017.110
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发表时间：
2017-11
期刊：
影响因子：
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通讯作者：
Armin Haj Aboutalebi;Lide Duan
中科院分区：
文献类型：
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作者：
Armin Haj Aboutalebi;Lide Duan
作为重要的非易失性记忆技术，STTMRAM被广泛认为是当前处理器中的通用内存解决方案。使用STT-MRAM作为主要内存提供了各种好处，但也带来了独特的设计挑战。尤其是，读取干扰是在读取后在STT-MRAM中的意外数据损坏的特征，导致每次读取操作后需要将数据恢复回存储。这些额外的还原大大改变了常规设计的优化。结果，直接采用常规的，恢复不可稳定的内存管理技术可能会导致STT-MRAM的次优设计。在这项工作中，我们提出了Restore-感知策略选择（RAPS），这是一种动态和混合行缓冲区管理方案，该方案在不可避免的数据中恢复基于Stt-MRAM的主要内存中。 RAPS在运行时监视行缓冲率，并在开放式策略之间动态切换。通过在还原中进行分解，RAP可以准确捕获最佳设计点，从而在运行时实现最佳的策略选择。我们的实验结果表明，与常规的页面关闭政策相比，RAP可显着提高系统性能和能源效率。
As an important non-volatile memory technology, STTMRAM is widely considered as a universal memory solution in current processors. Employing STT-MRAM as the main memory offers a wide variety of benefits, but also results in unique design challenges. In particular, read disturbance characterizes accidental data corruption in STT-MRAM after it is read, leading to a need of restoring data back to memory after each read operation. These extra restores greatly change the timing scenarios that conventional designs are optimized for. As a result, directly adopting conventional, restore-agnostic memory management techniques may lead to suboptimal designs for STT-MRAM. In this work, we propose Restore-Aware Policy Selection (RAPS), a dynamic and hybrid row buffer management scheme that factors in the inevitable data restores in STT-MRAM-based main memory. RAPS monitors the row buffer hit rate at run time, dynamically switching between the open-and close-page policies. By factoring in restores, RAPS accurately captures the optimal design points, achieving optimal policy selections at run time. Our experimental results show that RAPS significantly improves system performance and energy efficiency compared to the conventional page-closure policies.