Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn1-xMgxO:Ga films
Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn1-xMgxO:Ga films
复制标题
DOI：
10.1016/j.jssc.2007.12.032
复制
发表时间：
2008-03
影响因子：
3.3
通讯作者：
Q. Ma;Haiping He;Z. Ye;Li-ping Zhu;Jingyun Huang;Yinzhu Zhang;Binghui Zhao
中科院分区：
文献类型：
--
作者：
Q. Ma;Haiping He;Z. Ye;Li-ping Zhu;Jingyun Huang;Yinzhu Zhang;Binghui Zhao
通过直流反应磁控溅射在玻璃基板上沉积镁含量为 0 至 10at% 的高透明导电和近红外 (IR) 反射镓掺杂 ZnMgO (Zn1−xMgxO:Ga) 薄膜。 X 射线衍射表明所有 ZnMgO:Ga 薄膜都是多晶的，并且具有具有优先 c 轴取向的纤锌矿结构。霍尔测量表明这些薄膜的电阻率随着镁浓度的增加而明显增加。 Zn1−xMgxO:Ga薄膜在可见光范围内的平均透过率超过90%。所有 Zn1−xMgxO:Ga 薄膜在红外区域均具有低透射率和高反射率。
Highly transparent conductive and near infrared (IR) reflective Gallium-doped ZnMgO (Zn1−xMgxO:Ga) films with Mg content from 0 to 10at% were deposited on glass substrate by DC reactive magnetron sputtering. X-ray diffraction shows all the ZnMgO:Ga films are polycrystalline and have wurtzite structure with a preferential c-axis orientation. Hall measurements indicate that the resistivity of these films obviously increases with the Mg concentration increasing. The average transmittance of Zn1−xMgxO:Ga films is over 90% in the visible range. All the Zn1−xMgxO:Ga films have low transmittance and high reflectance in the IR region.