A New Generation of Room-Temperature Frequency-Multiplied Sources With up to 10x Higher Output Power in the 160-GHz-1.6-THz Range
A New Generation of Room-Temperature Frequency-Multiplied Sources With up to 10x Higher Output Power in the 160-GHz-1.6-THz Range
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DOI：
10.1109/tthz.2018.2876620
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发表时间：
2018-11-01
影响因子：
3.2
通讯作者：
Mehdi, Imran
中科院分区：
文献类型：
--
作者：
Siles, Jose V.;Cooper, Ken B.;Mehdi, Imran
我们报告的设计，制造和测试的新一代的全固态倍频太赫兹源提供高达十倍以上的输出功率在室温下比以前的国家的art.These新的来源benefit从一个新的“片上”功率组合拓扑结构最近推出和新的设备和电路彻底优化的高功率操作。以180 GHz、240 GHz、340 GHz、530 GHz、1 THz和1.6 THz为中心的原型已经设计、制造和测试。所有光源都表现出创纪录的性能，转换效率达到了基于物理的数值模型预测的理论极限。实测的标称室温输出功率水平为180 GHz时500 mW，220 GHz时110 mW，330 GHz时35 mW，550 GHz时30 mW，1.03 THz时2 mW，1.64 THz时0.7 mW。
We report on the design, fabrication, and testing of a new generation of all-solid-state frequency-multiplied terahertz sources providing up to ten times more output power at room temperature than the previous state of the art. These new sources benefi from both a novel "on-chip" power combined topology recently introduced and new devices and circuits thoroughly optimized for high-power operation. Prototypes centered at 180 GHz, 240 GHz, 340 GHz, 530 GHz, 1 THz, and 1.6 THz have been designed, fabricated, and tested. All sources exhibit record performances with conversion efficiencie reaching the theoretical limit predicted by physics-based numerical models. Measured nominal room-temperature output power levels are 500 mW at 180 GHz, 110 mW at 220 GHz, 35 mW at 330 GHz, 30 mW at 550 GHz, 2 mW at 1.03 THz, and 0.7 mW at 1.64 THz.