Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems
Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems
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DOI：
10.1016/j.sse.2011.01.025
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发表时间：
2011-06
影响因子：
1.7
通讯作者：
Tsuyoshi Nishimura;O. Nakatsuka;Y. Shimura;S. Takeuchi;B. Vincent;A. Vantomme;J. Dekoster;M. Caymax-M.
中科院分区：
文献类型：
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作者：
Tsuyoshi Nishimura;O. Nakatsuka;Y. Shimura;S. Takeuchi;B. Vincent;A. Vantomme;J. Dekoster;M. Caymax-M.
