Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts
Fabrication of silicon-nanocrystals-embedded silicon oxide passivating contacts
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DOI：
10.1109/pvsc45281.2020.9300609
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发表时间：
2020-06
期刊：
影响因子：
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通讯作者：
Ryohei Tsubata;K. Gotoh;Y. Kurokawa;N. Usami
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文献类型：
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作者：
Ryohei Tsubata;K. Gotoh;Y. Kurokawa;N. Usami
我们应用硅纳米晶体作为载流子传输路线在氧化硅的多晶硅氧化物（波罗）结。通过沉积具有不同氧浓度的氢化无定形氧化硅并随后退火，在氧化硅中形成Si纳米晶体。从截面透射电子显微镜（TEM）图像，在750 °C的退火温度下观察到样品的Si纳米晶体。在氢化前获得了约630 μ s的最高平均有效寿命和25.5 Ω cm的接触电阻率。
We apply silicon nanocrystals as a carrier transport route in silicon oxide for polycrystalline silicon on oxide (POLO) junctions. The Si nanocrystals are formed in silicon oxide by deposition of hydrogenated amorphous silicon oxide with different oxygen concentration and subsequent annealing. From cross-sectional transmission electron microscopy (TEM) images, the Si nanocrystals are observed for the sample at annealing temperature of 750 °C. The highest average effective lifetime of about $630 \ \mu\mathrm{s}$ and contact resistivity of $25.5\ \mathrm{m}\Omega\cdot \text{cm}$ are obtained before hydrogenation process.