The effect of small amounts of silicon on the oxidation of high-purity Co-25 wt. % Cr at elevated temperatures
The effect of small amounts of silicon on the oxidation of high-purity Co-25 wt. % Cr at elevated temperatures
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%20效果%20of%20小%20量%20of%20硅%20on%20%20氧化%20of%20高纯%20Co-25%20wt.%20%%20Cr%20at%20升高%20温度
DOI：
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发表时间：
1975
期刊：
影响因子：
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通讯作者：
J. Stringer
中科院分区：
文献类型：
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作者：
D. Jones;J. Stringer
一些研究人员报道，co - 25wt .% Cr在1000-1200℃的温度范围内缓慢氧化，形成保护性的Cr2O3垢；这是钴基高温合金的正常行为。也有人报道了非常快速的氧化，形成两层垢：外层是CoO层，内部是CoO基体中Cr2O3和CoCr2O4颗粒的混合物。这项调查表明，这种行为的主要原因是材料的纯度；快速氧化模式是高纯度材料的固有行为。最可能产生较慢模式的杂质是硅，而且研究表明，只要合金中也存在足够的氧，只要0.05 wt. %的硅就足以改变氧化模式：因此，似乎很可能是SiO2的细分散造成的。
Some investigators have reported that Co-25 wt.% Cr oxidizes slowly at temperatures in the range 1000–1200°C forming a protective Cr2O3 scale; and this is the normal behavior of cobalt-base superalloys. Others have reported very rapid oxidation, forming a two-layer scale: an outer CoO layer and an inner mixture of Cr2O3 and CoCr2O4 particles in a CoO matrix. This investigation shows that the principal reason for this behavior is the purity of the material; it appears that the rapid mode of oxidation is the intrinsic behavior for high purity material. The most probable impurity to produce the slower mode is silicon, and it is shown that as little as 0.05 wt. % Si is sufficient to change the mode of oxidation provided sufficient oxygen is also present in the alloy: it seems probable therefore that a fine dispersion of SiO2 is responsible.