A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive
A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive
复制标题
DOI：
10.1088/0960-1317/19/3/035011
复制
发表时间：
2009-03
影响因子：
2.3
通讯作者：
S. Kang;H. Kim;K. Chun
中科院分区：
文献类型：
--
作者：
S. Kang;H. Kim;K. Chun
我们的目标是开发一款单刀四掷 (SP4T) 射频微机电系统 (RF MEMS) 开关，用于无线收发器系统的多频段、多模式前端模块中的频段选择。 SP4T RF MEMS 开关基于四个单刀单掷 (SPST) RF MEMS 开关的排列。 SP4T RF MEMS 开关由双停止 (DS) 梳状驱动器驱动，具有横向电阻接触，由玻璃上的单晶硅 (SCS) 组成。 DS梳状驱动器的静电驱动实现了低驱动电压下的大接触力。通过大的接触力和横向电阻性金对金接触实现了良好的射频特性。通过使用无残余应力的SCS作为结构材料，实现了机械可靠性。所开发的SP4T RF MEMS开关的驱动电压为15 V，在10 mW信号下超过100万个周期后，在6 GHz时插入损耗低于0.31 dB，回波损耗高于20 dB，隔离值高于36 dB。
Our goal was to develop a single-pole four-throw (SP4T) radio frequency microelectromechanical system (RF MEMS) switch for band selection in a multi-band, multi-mode, front-end module of a wireless transceiver system. The SP4T RF MEMS switch was based on an arrangement of four single-pole single-throw (SPST) RF MEMS switches. The SP4T RF MEMS switch was driven by a double stop (DS) comb drive, with a lateral resistive contact, and composed of single crystalline silicon (SCS) on glass. A large contact force at a low-drive voltage was achieved by electrostatic actuation of the DS comb drive. Good RF characteristics were achieved by the large contact force and the lateral resistive Au-to-Au contact. Mechanical reliability was achieved by using SCS which has no residual stress as a structure material. The developed SP4T RF MEMS switch has a drive voltage of 15 V, an insertion loss below 0.31 dB at 6 GHz after more than one million cycles under a 10 mW signal, a return loss above 20 dB and an isolation value above 36 dB.