Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments
Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments
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DOI：
10.1063/1.2171481
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发表时间：
2006-01-30
影响因子：
4
通讯作者：
Kataura, H
中科院分区：
文献类型：
--
作者：
Kanbara, T;Takenobu, T;Kataura, H
在四端结构的场效应晶体管中直接测量了单壁碳纳米管（SWNT）束和多壁碳纳米管（MWNT）束的纳米管和金属电极之间的接触电阻（R-R）。在半导体单壁碳纳米管器件中，R-NT和纳米管电阻（R-NT）都随栅极电压急剧变化，而R-NT比金属单壁碳纳米管和多壁碳纳米管中的R-NT小一个数量级以上，相对于栅极电压几乎是恒定的。与半导体单壁碳纳米管的电阻相比，通过栅极电压或化学掺杂引入的载流子引起了R-drain的快速降低。(c)2006年，美国物理学会。
The contact resistance (R-cont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both R-cont and the nanotube resistance (R-NT) in a semiconducting SWNT device drastically changed with gate voltage, while R-cont, being more than one-order smaller than R-cont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in R-cont compared with the resistance of semiconducting SWNTs. (c) 2006 American Institute of Physics.