Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results
Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results
复制标题
开发适用于极高辐射环境的 n-in-p 大面积硅微带传感器 - ATLAS12 设计和初步结果
DOI：
10.1016/j.nima.2014.06.086
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Unno Y
中科院分区：
文献类型：
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作者：
Unno Y
我们一直在开发一种新型的耐辐射n+-in-p硅微带传感器的非常高的辐射环境，旨在应用于高亮度的大型强子对撞机。传感器制造在6英寸，P型浮区晶片，其中大面积条形传感器设计与许多微型传感器一起布置。用ATLAS 07传感器和独立结构研究了辐射耐受性。ATLAS 07设计被开发成新的ATLAS 12设计。ATLAS 12 A大面积传感器面向轴向条形传感器，ATLAS 12 M面向立体条形传感器。ATLAS 12传感器的新功能是两条切割线：910 μm的标准边缘间距和450 μm的超薄边缘间距，门控穿通保护结构，以及在立体条带的三角形角落中连接孤立条带。我们报告的ATLAS 12布局的设计和切割后的漏电流和晶片的电阻率的初步测量。
We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.