Superior radiation resistance of In1-xGaxN alloys:: Full-solar-spectrum photovoltaic material system
Superior radiation resistance of In1-xGaxN alloys:: Full-solar-spectrum photovoltaic material system
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DOI：
10.1063/1.1618353
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发表时间：
2003-11-15
影响因子：
3.2
通讯作者：
Kurtz, S
中科院分区：
文献类型：
--
作者：
Wu, J;Walukiewicz, W;Kurtz, S
基于III-V族半导体合金的高效多结或串联太阳能电池被应用于迅速扩大的空间和地面计划范围。耐高能辐射损伤是这种电池的一个基本特征，因为它们为大多数卫星提供动力，包括用于通信，国防和科学研究的卫星。最近，我们已经表明，In 1-xGaxN合金的能隙潜在地可以连续变化，从0.7到3.4 eV，提供了一个全太阳光谱材料系统的多结太阳能电池。我们发现，这些合金的光学和电子性能表现出更高的电阻高能量（2兆电子伏）质子辐照比标准目前使用的光伏材料，如GaAs和GaInP，因此提供了巨大的潜力，辐射硬高效太阳能电池的空间应用。所观察到的辐射损伤的半导体特性的不敏感性解释的带边相对于平均悬空键缺陷的能量表示的费米能级的稳定能量在In 1-xGaxN合金的位置。(C)2003年，美国物理学会。
High-efficiency multijunction or tandem solar cells based on group III-V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1-xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edges relative to the average dangling bond defect energy represented by the Fermi level stabilization energy in In1-xGaxN alloys. (C) 2003 American Institute of Physics.