Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy
Band alignment of ZnTe/GaAs heterointerface investigated by synchrotron radiation photoemission spectroscopy
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DOI：
10.1063/1.4794950
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发表时间：
2013-03
影响因子：
4
通讯作者：
Q. Guo;Kazutoshi Takahashi;Katsuhiko Saito;H. Akiyama;Tooru Tanaka;M. Nishio
中科院分区：
文献类型：
--
作者：
Q. Guo;Kazutoshi Takahashi;Katsuhiko Saito;H. Akiyama;Tooru Tanaka;M. Nishio
用金属有机物气相外延法在GaAs衬底上生长了ZnTe薄膜。利用高分辨同步辐射光电子能谱测量了ZnTe/GaAs异质结的价带偏移。根据Zn 3d和Ga 3d芯能级的结合能和价带顶值，确定了ZnTe/GaAs异质结的价带偏移为0.19eV。异质结显示I型带配置与导带偏移为0.65 eV。ZnTe/GaAs异质结能带取向的准确测定，为设计基于ZnTe/GaAs结构的光电器件提供了方便。
ZnTe films have been grown on GaAs substrate by metalorganic vapor phase epitaxy. High-resolution synchrotron radiation photoemission spectroscopy measurements are used to determine the valence band offset of ZnTe/GaAs heterojunctions. Based on the binding energies of Zn 3d and Ga 3d core levels and valence band maximum values, the valence band offset has been determined to be 0.19 eV for ZnTe/GaAs heterojunction. The heterojunction shows type I band configuration with a conduction band offset of 0.65 eV. The accurate determination of the band alignment of ZnTe/GaAs heterojunction facilitates the design of optical and electronic devices based on ZnTe/GaAs structure.