Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells

Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells
复制标题

DOI:
10.1023/a:1008922229057
复制
发表时间:
1999-07
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
I. M. Dharmadasa;A. Samantilleke;J. Young;M. H. Boyle;R. Bacewicz;A. Wolska
I. M. Dharmadasa;A. Samantilleke;J. Young;M. H. Boyle;R. Bacewicz;A. Wolska
中科院分区:
其他
文献类型:
--
作者:
I. M. Dharmadasa;A. Samantilleke;J. Young;M. H. Boyle;R. Bacewicz;A. Wolska

文献摘要

被引文献

相似文献