New mechanism for dislocation blocking in strained layer epitaxial growth
New mechanism for dislocation blocking in strained layer epitaxial growth
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应变层外延生长中位错阻挡的新机制
DOI：
10.1103/physrevlett.84.947
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发表时间：
2000
影响因子：
8.6
通讯作者：
Tromp
中科院分区：
文献类型：
--
作者：
Stach;Schwarz;Hull;Ross;Tromp
位错相互作用在塑性和异质外延应变弛豫中起着关键作用。我们使用真实的时间透射电子显微镜观察SiGe异质结构中的穿线和失配位错之间的相互作用来定量研究相互作用。除了预期的长距离阻塞的线程段，我们观察到一个新的短程机制，这是显着更有效。模拟结果表明，这种反应性阻断发生时，两个位错具有相同的伯格斯矢量重新连接。
Dislocation interactions play a critical role in plasticity and heteroepitaxial strain relaxation. We use real time transmission electron microscopy observations of the interaction between threading and misfit dislocations in SiGe heterostructures to investigate interactions quantitatively. In addition to the expected long-range blocking of threading segments, we observe a new short-range mechanism which is significantly more effective. Simulations show that this reactive blocking occurs when two dislocations with the same Burgers vector reconnect.