The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†
The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†
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硅中硼和磷离子注入层的电活性和霍尔迁移率测量†
DOI：
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发表时间：
1969
期刊：
影响因子：
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通讯作者：
L. Large
中科院分区：
文献类型：
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作者：
R. F. Webber;R. Thorn;L. Large
本文研究了硅中硼和磷的浅掺杂的电学行为。三叶草货车德堡模式磨损denned平面掩模技术，并进行离子注入，以产生一个“定制”的杂质分布的浓度与深度大致均匀。结果发现，在620° C和750° C之间的温度下退火后，磷的钝化变得完全电活性，而硼的钝化需要超过900° C的退火。在520° C附近退火后，硼的析出物出现了一个副活度峰，其强度随离子注入剂量的增加而增加。
This paper describes an investigation into the electrical behaviour of shallow implantations of boron and phosphorus in silicon. The clover-leaf Van der Pauw patterns wore denned by planar masking techniques, and were ion implanted to produce a ‘ tailored ’ impurity profile of approximately uniform concentration with depth. It was found that phosphorus implantations became fully electrically active after annealing at a temperature between 620° c and 750° c, whereas the boron implantations required an anneal in excess of 900° c. A subsidiary activity peak, whose magnitude increased with the ion dose, was observed for the boron implantations after annealing at a temperature around 520° c.