Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer
Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum well as the electron blocking layer
复制标题
单步量子阱作为电子阻挡层的紫外发光二极管优势的数值研究
DOI：
10.1007/s11082-012-9636-2
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发表时间：
2013-05-01
影响因子：
3
通讯作者：
Chen, C. Q.
中科院分区：
文献类型：
--
作者：
Tian, W.;Feng, Z. H.;Chen, C. Q.
数值研究了单阶量子阱作为电子阻挡层的紫外发光二极管的优点。利用Crosslight模拟程序研究了EBL的能带图、空穴浓度、EBL附近的静电场、电流-电压曲线和内量子效率。模拟结果表明，与传统的量子阱结构相比，单阶梯量子阱结构具有更好的性能，这是由于阶梯量子阱的引入减轻了EBL附近由于静电场的改变而引起的能带弯曲。因此，提高了空穴注入效率，从而提高了IQE和总照明功率。
The advantages of ultraviolet light-emitting diodes with a single step quantum well used as electron blocking layer (EBL) are studied numerically. The energy band diagrams, hole concentrations, electrostatic field near the EBL, current-voltage curve and internal quantum efficiency (IQE) are investigated by using the Crosslight simulation programs. The simulation results show that the structure with a single step quantum well has better performance over the conventional one, which can be attributed to the mitigated band bending near the EBL due to the change of electrostatic field by using a step well. Therefore, the efficiency of hole injection is improved, with which both the IQE and the total lighting power are increased.