Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi2 Films Prepared by Magnetron-Sputtering Deposition
Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi2 Films Prepared by Magnetron-Sputtering Deposition
复制标题
磁控溅射沉积制备的高度取向 β-FeSi2 薄膜的时间分辨 1.5 µm 波段光致发光
DOI：
10.1143/jjap.43.l127
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发表时间：
2004
影响因子：
1.5
通讯作者：
T. Hiruma
中科院分区：
文献类型：
--
作者：
Shucheng Chu;Toru Hirohada;M. Kuwabara;H. Kan;T. Hiruma
研究了高（110）取向β-FeSi2薄膜在77 K和室温下的时间衰减特性。1.5 μ m波段的光致发光（PL）衰减速度与激光脉冲衰减速度一样快，特征衰减时间为亚纳秒，比先前报道的β-FeSi2沉淀快4个数量级。此外，从77 K到室温，我们的β-FeSi2薄膜的PL强度受到了更弱的热猝灭。这些结果表明在发光和高速响应器件中可能有很好的应用前景。
Temporal decay characteristics of highly (110)-oriented β-FeSi2 films were explored at 77 K and at room temperature. The 1.5 µm-band photoluminescence (PL) decayed as fast as that of the laser pulse, giving a characteristic decay time of sub-nanosecond, which is four orders faster than that of β-FeSi2 precipitates previously reported. In addition, the PL intensity of our β-FeSi2 films suffered a much weaker thermal quenching from 77 K to room temperature. These results indicated possible promising applications in light-emitting and high-speed response devices.