Ion-Implanted Silicon X-Ray Calorimeters: Present and Future
Ion-Implanted Silicon X-Ray Calorimeters: Present and Future
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离子注入硅 X 射线热量计：现在和未来
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Szymkowiak
中科院分区：
文献类型：
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作者：
R. Kelley;C. Allen;M. Galeazzi;C. Kilbourne;D. McCammon;F. Porter;A. Szymkowiak
我们现在有大约25年的经验与X射线热量计的基础上掺杂半导体温度计。离子注入硅阵列已被用于天体物理和实验室原子物理。器件的性能和特性已经充分了解，可以在0.1-100 keV范围内为各种应用进行优化设计。通过新的吸收体材料、吸收体附着方法和紧凑的低热导率JFET阵列，应该有可能将该技术从当今的36像素阵列推进到大约大一个数量级的阵列，并显着提高能量分辨率。这将使现在正在考虑的仪器具有新的能力，用于可能在大约五年内飞行的任务。
We now have about 25 years of experience with X-ray calorimeters based on doped semiconductor thermometers. Ion-implanted Si arrays have been used in astrophysics and laboratory atomic physics. The device properties and characteristics are sufficiently well understood to allow optimized designs for a wide variety of applications over the 0.1–100 keV range. With new absorber materials, approaches for absorber attachment and compact, low thermal conductance JFET arrays, it should be possible to advance this technology from the 36 pixel arrays of today to arrays that are about an order of magnitude larger, and with significantly improved energy resolution. These would enable new capabilities on instruments being considered now for missions that may fly in about five years.