Experimental verification of ribbon formation process in chill-block melt spinning
Experimental verification of ribbon formation process in chill-block melt spinning
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DOI：
10.1016/j.actamat.2006.01.025
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发表时间：
2006-05
期刊：
影响因子：
9.4
通讯作者：
K. Nagashio;K. Kuribayashi
中科院分区：
文献类型：
--
作者：
K. Nagashio;K. Kuribayashi
由于熔体/基体界面很难直接观察，因此熔体快淬的快速凝固过程是根据所得相/显微组织与旋轮转速之间的关系经验性地推导出来的。关于玻璃带是在熔池内还是熔池外凝固（热或动量输运控制）的争论仍然没有解决。我们报告的熔体/基板界面的第一次原位观察。将硅熔体喷射到由腔室中的马达“横向”旋转的硅晶片上。由于硅的热导率与铜的热导率具有相同的数量级，因此对于>1.1μm的波长透明的硅晶片可用作激冷衬底以模拟在铜衬底上的快速凝固。通过高速红外成像连续捕捉到的硅晶片图像显示，带状物仅在熔池的下侧凝固。结果表明，薄带的形成是由热输运控制的。
The rapid solidification process in melt spinning has been empirically deduced from the relationship between the resultant phases/microstructure and the wheel speed, because the melt/substrate interface is difficult to observe directly. The controversy over whether the ribbon solidifies in or outside the melt puddle (thermal or momentum transport control) still remains unresolved. We report the first in situ observation of the melt/substrate interface. The silicon melt was ejected onto a silicon wafer rotated “transversely” by a motor in a chamber. The silicon wafer, which is transparent for wavelengths >1.1μm, can be used as the chill substrate to simulate rapid solidification on a copper substrate, since the thermal conductivity of silicon is of the same order of magnitude as that of copper. Successive images captured through the silicon wafer by high-speed infrared imaging revealed that the ribbon solidified just at the underside of the melt puddle. It was demonstrated that ribbon formation is controlled by thermal transport.