Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth
Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth
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DOI：
10.1557/jmr.1999.0004
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发表时间：
1999-01
影响因子：
2.7
通讯作者：
J. Belot;R. McNeely;Anchuan Wang;Charles J. Reedy;T. Marks;G. Yap;A. Rheingold
中科院分区：
文献类型：
--
作者：
J. Belot;R. McNeely;Anchuan Wang;Charles J. Reedy;T. Marks;G. Yap;A. Rheingold
本文报道了锆有机金属有机化学气相沉积（MOCVD）前体Zr（acac）_4和Zr（dpm）_4（acac =乙酰丙酮化物; dpm =二特戊酰甲烷化物）以及基于四齿席夫碱配体Zr（tfacen）_2（tfacen =二-三氟乙酰丙酮-亚乙基二亚胺化物）的高挥发性、空气和水分稳定的新型锆前体的快速、有效的合成。改进的一步合成路线使用四（二甲基氨基）锆作为一个共同的中间体，并代表了一个重大的进步，以前的方法使用ZrCl_4或二酮复分解。此外，Zr（tfacen）_2是一种有效的金属有机前驱体，可用于MOCVD生长（100）取向的氧化钇稳定的氧化锆薄膜。
This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)_4 and Zr(dpm)_4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)_2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl_4 or diketonate metathesis. Furthermore, Zr(tfacen)_2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.