Si80Ge20 thermoelectric alloys prepared with GaP additions
Si80Ge20 thermoelectric alloys prepared with GaP additions
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添加 GaP 制备的 Si80Ge20 热电合金
DOI：
10.1063/1.359663
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发表时间：
1995
影响因子：
3.2
通讯作者：
C. B. Vining
中科院分区：
文献类型：
--
作者：
B. Cook;J. Harringa;Siyuan Han;C. B. Vining
通过粉末冶金技术将受控量的GaP和P添加到Si0.8Ge0.2基质中，以评估热电应用的最佳组成。用电感耦合等离子体原子发射光谱法测定了完全致密的热压坯中镓和磷的含量。通过在室温下的霍尔效应测量以及通过电阻率、塞贝克系数和至1000 °C的热扩散率的测量来表征压块的输运性质。电输运性质的相当大的变化被发现伴随的Ga/P比的变化，在掺杂剂的总量，和在其他制备条件的变化。具有磷化镓添加物的合金表现出比仅掺杂有磷的合金中获得的载流子浓度更高的载流子浓度。标称磷含量大于2.0at. %的合金被认为是过掺杂的，而磷含量小于0.6at. %的合金被认为是过掺杂的。
Controlled amounts of GaP and P were added to a Si0.8Ge0.2 matrix by a powder‐metallurgical technique in order to evaluate the optimum composition for thermoelectric applications. Bulk determination of the gallium and phosphorus content in fully dense, hot pressed compacts was performed by inductively coupled plasma atomic emission spectroscopy. The transport properties of the compacts were characterized by Hall effect measurements at room temperature and by measurements of electrical resistivity, Seebeck coefficient, and thermal diffusivity to 1000 °C. Considerable variation in the electrical transport properties were found to accompany changes in the Ga/P ratio, in the total amount of dopant, and changes in other preparation conditions. Alloys with gallium phosphide additions exhibit carrier concentrations higher than those obtained in alloys doped only with phosphorus. Alloys with a nominal phosphorus content greater than 2.0 at. % were found to be overdoped and those containing less than 0.6 at. % pho...