Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory
Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory
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DOI：
10.1021/acsaelm.9b00191
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发表时间：
2019
影响因子：
4.7
通讯作者：
Run-Wei Li
中科院分区：
文献类型：
--
作者：
Qilai Chen;Gang Liu;Wuhong Xue;Jie Shang;Shuang Gao;Xiaohui Yi;Ying Lu;Xinhui Chen;Minghua Tang;Xuejun Zheng;Run-Wei Li
