X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering
X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering
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DOI：
10.1016/j.susc.2004.09.020
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发表时间：
2004-11-20
期刊：
影响因子：
1.9
通讯作者：
Nastasi, M
中科院分区：
文献类型：
--
作者：
Jacobsohn, LG;Schulze, RK;Nastasi, M
本文研究了x射线光电子能谱（XPS）对非晶态碳化硼薄膜表面化学状态的解释。采用直流磁控溅射沉积薄膜，并采用溅射清洗和角度分辨检测的XPS对薄膜进行了表征。结果表明，碳化硼的本征化学态分别发生在282.8和188.6。c - 15和b - 15线中的eV值，所有其他观察到的状态都与暴露于环境条件下的污染有关。由于沉积后退火而发生的结构变化无法通过XPS观察到，这表明了该技术的局限性。(C) 2004 Elsevier B.V.版权所有
The interpretation of the surface chemical states of amorphous boron carbide films as revealed by X-ray photoelectron spectroscopy (XPS) is investigated in this work. Films were deposited by dc-magnetron sputtering and characterized by XPS employing sputter-cleaning and angle-resolved detection. Our results indicate that the intrinsic chemical states of boron carbide occur at similar to282.8 and similar to188.6. eV in the C-1s and B-1s lines, respectively, and that all other observed states are related to contamination due to exposure to ambient conditions. Structural modifications known to occur due to post-deposition annealing could not be observed by XPS, pointing to limitations of this technique. (C) 2004 Elsevier B.V. All rights reserved.