A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2
A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2
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DOI：
10.1007/s12274-020-2613-3
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发表时间：
2020-01
期刊：
影响因子：
9.9
通讯作者：
Pengdong Wang;Rashid Khan;Zhanfeng Liu;Bo Zhang;Yuliang Li;Sheng Wang;Yunbo Wu;Hongen Zhu;Yi Liu;Guobin Zhang;Dayong Liu;Shuangming Chen;L. Song;Zhe Sun
中科院分区：
文献类型：
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作者：
Pengdong Wang;Rashid Khan;Zhanfeng Liu;Bo Zhang;Yuliang Li;Sheng Wang;Yunbo Wu;Hongen Zhu;Yi Liu;Guobin Zhang;Dayong Liu;Shuangming Chen;L. Song;Zhe Sun
金属嵌入是一种很有前途的过渡金属二硫属化合物（TMDs）电子性质调控方法。然而，目前还缺乏足够的知识，如何插入原子直接影响二维结构层，并调整其中的能带结构。利用X射线吸收精细结构和角分辨光电子能谱研究了Cu嵌入对Cu_（0.03）TaSe_2晶体中TaSe_2层的影响。嵌入的Cu原子与主体层的Se形成键，并且存在从Cu到Se的电荷转移。通过研究能带色散的变化，我们发现电子结构的变化超出了仅考虑电荷掺杂效应的简单刚性能带模型。这一发现揭示了插层材料能带色散的异常变化与插层金属元素与基质层中阴离子形成键有关，为深入理解插层材料的电子结构提供了参考。
The intercalation of metal is a promising method for the modulating electronic properties in transition metal dichalcogenides (TMDs). However, there still lacks enough knowledge about how the intercalated atoms directly impact the two-dimensional structural layers and modulate the band structures therein. Taking advantage of X-ray absorption fine structure and angle-resolved photoemission spectroscopy, we studied how Cu intercalation influences the host TaSe2layers in Cu0.03TaSe2crystals. The intercalated Cu atoms form bonds with Se of the host layers, and there is charge transfer from Cu to Se. By examining the changes of band dispersions, we show that the variation of electronic structures is beyond a simple rigid band model with merely charge doping effect. This work reveals that the unusual change of band dispersions is associated with the formation of bonds between the intercalated metal elements and anion ions in the host layers, and provides a reference for the comprehensive understanding of the electronic structures in intercalated materials.