Low excess noise characteristics in thin avalanche region GaAs diodes
Low excess noise characteristics in thin avalanche region GaAs diodes
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DOI：
10.1049/el:19980021
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发表时间：
1998-01-08
影响因子：
1.1
通讯作者：
Grey, R
中科院分区：
文献类型：
--
作者：
Li, KF;Ong, DS;Grey, R
本文对雪崩宽度为1.13 ~ 0.050 μ m的同质结GaAs p（+）-i-n（+）和n（+）-i-p（+）二极管进行了雪崩噪声测量。这些噪声测量结果表明，相反麦金太尔的雪崩噪声理论，有很大的减少雪崩噪声，因为w是减少电子和空穴引发的碰撞电离。
Avalanche noise measurements have been performed on a range of homojunction GaAs p(+)-i-n(+) and n(+)-i-p(+) diodes with avalanche widths, w ranging from 1.13 to 0.050 mu m. These noise measurements show that, contrary to McIntyre's avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation.