Temperature dependence of the energy gap in semiconductors
Temperature dependence of the energy gap in semiconductors
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DOI：
10.1139/p84-043
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发表时间：
1984-03
影响因子：
1.2
通讯作者：
A. Manoogian;J. Woolley
中科院分区：
文献类型：
--
作者：
A. Manoogian;J. Woolley
研究表明，常用于描述半导体能隙随温度变化的方程\(AE = aT^{2}/(T + P)\)，是最近提出的方程\(AE = UT' + VO[\coth(\theta/2T) - 1]\)中电子 - 声子相互作用项的二阶近似。计算表明，近似方程中的参数\(a\)和\(P\)只有在\(\theta/T\approx1\)的关系成立时才能描述半导体的特性，其有效性受到现有膨胀效应大小的限制。在这种情况下，发现\(P = \theta/2\)，其中\(\theta\)是以温度为单位的材料中声子谱的有效爱因斯坦振动频率。对两个方程在拟合实验数据时进行了比较，并对其进行了介绍和讨论。
It is shown that the equation AE = aT2/(T + P), which is commonly used to describe the temperature variation of energy gaps in semiconductors, is a second order approximation of the electron-phonon interaction term in the recently proposed equation AE = UT' + VO[coth (0/2T) - I]. The calculation shows that the parameters a and P of the approximate equation can describe the characteristics of semiconductors only if the relation O/T @ 1 holds, with the validity limited by the magnitude of the existing dilation effect. In this case it is found that P = 012 where 0 is the effective Einstein vibrational frequency, in temperature units, of the phonon spectrum in the material. A comparison of the two equations when fitted to experimental data is p;esented and discussed.