Tunneling electroresistance of MgZnO-based tunnel junctions
Tunneling electroresistance of MgZnO-based tunnel junctions
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DOI：
10.1063/1.4966180
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发表时间：
2016-10-24
影响因子：
4
通讯作者：
Sahashi, Masashi
中科院分区：
文献类型：
--
作者：
Belmoubarik, Mohamed;Al-Mahdawi, Muftah;Sahashi, Masashi
研究了金属/纤锌矿-MgZnO/金属结在非易失性随机存储器中的隧穿电阻（TER）。在+/- 1V电压下，利用电场冷却检测到电阻开关，在2K下，TER比为360%-490%。提取的两个电阻状态之间的平均势垒高度的变化给出了在2.5 μ C/cm（2）的低温极限的MgZnO电极化的估计。此外，温度依赖的TER比和在势垒界面的局域态能量的移动支持的MgZnO隧道势垒的铁电行为。从第一性原理计算，我们发现了类似的效果的势垒高度的变化来自ZnO电极化的逆转。除了铁电特性之外，使用金属电极和较低生长温度的可能性使得ZnO基存储器件适合于CMOS集成。出版社：AIP Publishing
We investigated the tunneling electroresistance (TER) in metal/wurtzite-MgZnO/metal junctions for applications in nonvolatile random-access memories. A resistive switching was detected utilizing an electric-field cooling at +/- 1V and exhibited a TER ratio of 360%-490% at 2 K. The extracted change in the average barrier height between the two resistance states gave an estimation of the MgZnO electric polarization at 2.5 mu C/cm(2) for the low-temperature limit. In addition, the temperature-dependent TER ratio and the shift of the localized states energies at the barrier interface supported the ferroelectric behavior of the MgZnO tunnel-barrier. From the first-principles calculations, we found a similar effect of the barrier height change coming from the reversal of ZnO electric polarization. The possibility of using metal electrodes and lower growth temperatures, in addition to the ferroelectric property, make the ZnO-based memory devices suitable for CMOS integration. Published by AIP Publishing.