Angle-resolved photoemission study of Ga1-xMnxAs
Angle-resolved photoemission study of Ga1-xMnxAs
复制标题
Ga1-xMnxAs 的角分辨光电子发射研究
DOI：
10.1103/physrevb.64.125304
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发表时间：
2001
影响因子：
3.7
通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
--
作者：
J. Okabayashi;A. Kimura;O. Rader;T. Mizokawa;A. Fujimori;T. Hayashi;Masaaki Tanaka
Valence-band dispersions in ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ along the $\ensuremath{\Gamma}\ensuremath{-}\ensuremath{\Delta}\ensuremath{-}X$ line $(k\ensuremath{\Vert}[001])$ are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}.$ These states show no clear dispersions and behave like an impurity band induced by Mn doping.
