Electron-phonon processes of the silicon-vacancy centre in diamond
Electron-phonon processes of the silicon-vacancy centre in diamond
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DOI：
10.1088/1367-2630/17/4/043011
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发表时间：
2015-04-08
影响因子：
3.3
通讯作者：
Jelezko, Fedor
中科院分区：
文献类型：
--
作者：
Jahnke, Kay D.;Sipahigil, Alp;Jelezko, Fedor
我们研究了金刚石中带负电荷的硅空位（SiV-）中心的基态和激发态的声子诱导电子动力学。测量了4K-350 K温度范围内的光学跃迁线宽、跃迁波长和激发态寿命。基态轨道弛豫率的测量使用时间分辨荧光技术。的SiV-中心的激发态和基态的热加宽的微观模型的开发。一个涉及单声子跃迁的振动过程被发现，以确定在低温下的基态和激发态的轨道弛豫率。我们讨论了我们的研究结果在基态量子位的相干性的影响，并提出了方法来延长相干时间的SiV量子位。
We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.